| PART |
Description |
Maker |
| MCM72CF64SG66 MCM72CF32 MCM72CF32SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MCM72JG64SG66 MCM72JG32 MCM72JG32SG66 |
256KB and 512KB Pipelined BurstRAM Secondary Cache Module for Pentium
|
http://
MOTOROLA[Motorola, Inc]
|
| MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| M295V400BT45M1T M295V400BT45M3T M295V400BT45M6T M2 |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicroelectronics
|
| M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation
Sharp, Corp.
|
| M29F400T-55M1R M29F400T-55M3R M29F400T-55N1R M29F4 |
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SOIC -40 to 85
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Precision Low-Power Single Supply Operational Amplifier 8-SOIC -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Precision Low-Power Single Supply Operational Amplifier 8-PDIP -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Quad Precision Low-Power Single Supply Operational Amplifier 14-PDIP 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Dual Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single Inverter Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single 2-Input Exclusive-OR Gate 5-SOT-23 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single 2-Input Exclusive-OR Gate 5-SC70 -40 to 85 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-SSOP 0 to 70 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85
Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125
Precision Low-Power Single Supply Operational Amplifier 8-SOIC 0 to 70
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
Replaced by THS1030 : 10-Bit, 20 MSPS ADC Single Ch., PowerDown/Standby Mode, Low Power 28-TSSOP -40 to 85
Quad Precision Low-Power Single Supply Operational Amplifier 16-SOIC
High-Speed, Low-Power, Precision Dual Operational Amplifier 8-SOIC -55 to 125
Excalibur High-Speed Low-Power Precision Dual Operational Amplifier 8-PDIP
CONNECTOR ACCESSORY
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8，启动座单电源闪
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
